一区二区三区欧美-亚洲午夜精品-一区二区三区在线播放-欧美一区二区在线

芯片衰減器

關鍵性性能指標

處理芯片(pian)衰減(jian)器(qi)(qi),最(zui)多250瓦，最(zui)多18 GHz，規范衰減(jian)器(qi)(qi)在(zai)每個(ge)氣(qi)(qi)溫(wen)表(biao)下勻稱等地(di)降底RF耗油率(lv)，而(er)氣(qi)(qi)溫(wen)表(biao)可(ke)(ke)變氣(qi)(qi)門正(zheng)時基帶IC芯片(pian)設計(ji)方案為在(zai)高(gao)溫(wen)天氣(qi)(qi)下變大其衰減(jian)，以能提供信號燈調(diao)平軟件(jian)應該用必需(xu)(xu)的(de)佳死機(ji)。斑片(pian)狀衰減(jian)器(qi)(qi)適(shi)用調(diao)大器(qi)(qi)三(san)極管，受到器(qi)(qi)，上/下轉換成器(qi)(qi)，相位配對(dui)陣列和觸點開關軟件(jian)應該用。依照必需(xu)(xu)的(de)技術參數，是可(ke)(ke)以在(zai)可(ke)(ke)能含有薄或(huo)厚電阻功率(lv)的(de)BeO，氮化鋁(lv)(lv)或(huo)脫色鋁(lv)(lv)陶瓷圖片(pian)上手工(gong)制(zhi)造基帶IC芯片(pian)。

品牌：MACOM

物品祥情說明

IC芯片衰減器

Model	Power (Watts)	Frequency (GHz)	Ceramic Substrate	Resistor Film	Wrap Options	Finish Option	Width (Inches)	Length (Inches)	Height (Inches)
1KNA250	250	1	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.375	0.040
	100	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.350	0.225	0.040
	150	1.9	AlN	Thin & Thick	G, Tabbed	N, T, H	0.375	0.250	0.040
2KNA250	250	2.3	AlN	Thin & Thick	G, Tabbed	N, T, H	0.500	0.500	0.040
3KNA100	100	3	AlN	Thin	G, Tabbed	N, T, H	0.375	0.250	0.040
	10	4	BeO	Thin	G	N, T, H	0.100	0.200	0.040
	100	0.5	BeO	Thin	G	N, T, H	0.500	0.500	0.40
	20	4	BeO	Thin	G	N, T, H	0.250	0.250	0.040
	50	1	BeO	Thin	G	N, T, H	0.375	0.375	0.040
	1.5	12.4	Alumina	Thin		N, T, H, G	0.125	0.150	0.010
	0.75	18	Alumina	Thin		N, T, H, G	0.060	0.075	0.010
	0.75	8	Alumina	Thin	F	N, T, H, G	0.060	0.075	0.010
	0.75	18	Alumina	Thin	Tabbed	G, T, H	0.060	0.075	0.040
	0.75	18	Alumina	Thin	W	N, T, H, G	0.060	0.075	0.010
	1.5	4	Alumina	Thin	F	N, T, H, G	0.125	0.150	0.010
	1.5	12.4	Alumina	Thin	Tabbed	G, T, H	0.125	0.150	0.040
	1.5	12.4	Alumina	Thin	W	N, T, H, G	0.125	0.150	0.010
	100	0.4	BeO	Thin	G	N, T, H	0.500	0.500	0.040