一区二区三区欧美-亚洲午夜精品-一区二区三区在线播放-欧美一区二区在线

CGHV40180F大功率氮化鎵功放200W

比較重要基本參數

功率：180-250W峰值(zhi)

頻帶寬度范圍內：DC-2.0GHz收獲： 24dB運作電阻值： 50V裝封：Pill丸式、法蘭部

超低價訂貨周期：2-3周

軟件情況簡介

必選封裝(zhuang)主要形(xing)式：CGHV40180P CGHV40180F

Product SKU	Recommended For New Design?	Technology	Frequency Min	Frequency Max	Peak Output Power	Gain	Efficiency	Operating Voltage	Form	Package Type
CGHV40180P	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Pill
CGHV40180F-AMP3	Yes	GaN on SiC	0.96 GHz	1.25 GHz	200 W	24 dB	70%	28 V / 50 V	Evaluation Board	Flange
CGHV40180F	Yes	GaN on SiC	DC	2 GHz	200 W	24 dB	70%	28 V / 50 V	Packaged Discrete Transistor	Flange