行業中資迅
頒布準確時間:2024-11-18 17:03:20 閱覽:754
CGHV60170D是氮化鎵(GaN)高微電子變遷率硫化鋅管(HEMT)。與硅或砷化鎵不同之處較,GaN擁有優良的功效;富含較高的擊穿電壓場強;飽和狀態網上傾斜速率較高;舉例說明較高的熱傳遞性。與Si和GaAs氯化鈉晶體管較之較,CGHV60170D具備較高的額定功率黏度和更寬的頻率段屏幕寬度匹配。

好產品型號
詳述:170瓦(wa);6.0 GHz;50VGaN HEMT集成ic
最高(gao)速度(MHz):0
最快(kuai)頻繁(MHz):6000
增益值值(dB):17
打包封裝(zhuang)等級分類:Die
的特征
65%常見速率擴(kuo)展速率
170 W明顯PSAT
50V操作
高損壞場強
概率范圍圖高至6 GHz
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